IXA55I1200HJ - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXA55I1200HJ
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW57732579
Category

IGBT Transistor, IGBT Module
Package

TO-247
Description

IXYS SEMICONDUCTOR IXA55I1200HJ IGBT Single Transistor, 84A, 2.1V, 290W, 1.2kV, TO-247AD, 3Pins
Documentation

Datasheet

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IXA55I1200HJ Specifications

Attribute	Attribute Value

Part Number	IXA55I1200HJ
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW57732579
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247
Number of Positions	3 Position
Power Dissipation	290 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	290 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	290 W
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Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.34 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The IXA55I1200HJ is a XPT IGBT features high-current handling capabilities, high-speed switching abilities, low total energy losses and low current fall times. They have a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Their low gate charges also help reduce gate drive requirements and switching losses. In addition to being avalanche rated, this device has square reverse bias safe operating areas (RBSOA) up to the breakdown voltage of 1200V, a necessary ruggedness in Snubberless hard-switching applications. The new 1200V XPT™ device with co-packed anti-parallel Sonic-FRD™ or HiPerFRED™ diode is optimized to reduce turn-OFF losses and suppress ringing oscillations, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process.
Easy paralleling due to the positive temperature coefficient of the ON-state voltage
Thin wafer technology combined with the XPT design results in a competitive low VCE (saturation)
Very low gate charge
Low EMI
Square RBSOA at 3x IC
Short-circuit rated for 10µs

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