IXBH40N160 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXBH40N160
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW59800470
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1600V 33A 350000mW 3Pin(3+Tab) TO-247AD
Documentation

Datasheet

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IXBH40N160 Specifications

Attribute	Attribute Value

Part Number	IXBH40N160
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW59800470
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	1.60 kV
Current Rating	33.0 A
Polarity	N-Channel
Power Dissipation	350 W
Rise Time	60.0 ns
Breakdown Voltage (Collector to Emitter)	1600 V
Input Power (Max)	350 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	350000 mW
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.46 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

You can use this IXBH40N160 IGBT transistor from Ixys Corporation as an electronic switch. It has a maximum collector emitter voltage of 1600 V. Its maximum power dissipation is 350000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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