IXBT42N170 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXBT42N170
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW69970134
Category

IGBT Transistor, IGBT Module
Package

TO-268-3
Description

Trans IGBT Chip N-CH 1700V 80A 360000mW 3Pin(2+Tab) TO-268
Documentation

Datasheet

IXBT42N170 Global Supplier

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IXBT42N170 Specifications

Attribute	Attribute Value

Part Number	IXBT42N170
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW69970134
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-268-3
Power Dissipation	360000 mW
Breakdown Voltage (Collector to Emitter)	1700 V
Reverse recovery time	1.32 µs
Input Power (Max)	360 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	360000 mW
	expand all
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

VCES = 1700 V
IC25 = 75 A
VCE(sat) = 3.3 V
Features
• High Blocking Voltage
• JEDEC TO-268 surface and JEDEC TO-247 AD
• Low conduction losses
• High current handling capability
• MOS Gate turn-on
\- drive simplicity
• Molding epoxies meet UL 94 V-0 flammability classification
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• Capacitor discharge circuits
Advantages
• Lower conduction losses than MOSFETs
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
(isolated mounting screw hole)

expand all

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- Electrical testing
- Surface testing

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