IXDH20N120D1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXDH20N120D1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW13727959
Category

IGBT Transistor, IGBT Module
Package

TO-3-3
Description

Trans IGBT Chip N-CH 1200V 38A 200000mW 3Pin(3+Tab) TO-247AD
Documentation

Datasheet

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IXDH20N120D1 Specifications

Attribute	Attribute Value

Part Number	IXDH20N120D1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW13727959
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Power Rating	200 W
Power Dissipation	200000 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	40 ns
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.46 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This powerful and secure IXDH20N120D1 IGBT transistor from Ixys Corporation will make sure your circuit works properly. Its maximum power dissipation is 200000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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