IXDH30N120D1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXDH30N120D1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW13701921
Category

IGBT Transistor, IGBT Module
Package

TO-3-3
Description

Trans IGBT Chip N-CH 1200V 60A 300000mW 3Pin(3+Tab) TO-247AD
Documentation

Datasheet

IXDH30N120D1 Global Supplier

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IXDH30N120D1 Specifications

Attribute	Attribute Value

Part Number	IXDH30N120D1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW13701921
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Power Rating	300 W
Power Dissipation	300000 mW
Breakdown Voltage (Collector to Emitter)	1200 V
Reverse recovery time	40 ns
Input Power (Max)	300 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Short Circuit SOA Capability Square RBSOA
**V**CES **= 1200 V**
**I**C25 **= 60 A**
**V**CE(sat) typ **= 2.4 V**
Features
● NPT IGBT technology
● low saturation voltage
● low switching losses
● square RBSOA, no latch up
● high short circuit capability
● positive temperature coefficient for easy paralleling
● MOS input, voltage controlled
● optional ultra fast diode
● International standard packages
Typical Applications
● AC motor speed control
● DC servo and robot drives
● DC choppers
● Uninteruptible power supplies (UPS)
● Switch-mode and resonant-mode power supplies

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