IXDN602SIATR - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXDN602SIATR
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW10145040
Category

FET Driver
Package

SOIC-8
Description

IXDN Series 35V 2A 2.5Ω Dual Low-Side Ultrafast MOSFET Drivers - SOIC-8
Documentation

Datasheet

IXDN602SIATR Global Supplier

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IXDN602SIATR Specifications

Attribute	Attribute Value

Part Number	IXDN602SIATR
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW10145040
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Rise/Fall Time	7.5ns, 6.5ns
Number of Outputs	2 Output
Rise Time	15 ns
Fall Time	15 ns
Fall Time (Max)	15 ns
Fall Time (Max)	15 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Supply Voltage	4.5V ~ 35V
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Say goodbye to transistors not being provided proper biasing current by using this IXDN602SIATR power driver by Ixys Corporation. This device has a maximum propagation delay time of 60 ns. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V.

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