IXFB110N60P3 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFB110N60P3
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW13112000
Category

MOSFET, MOSFET Transistor
Package

TO-264-3
Description

PLUS N-CH 600V 110A
Documentation

Datasheet

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IXFB110N60P3 Specifications

Attribute	Attribute Value

Part Number	IXFB110N60P3
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW13112000
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.056 Ω
Polarity	N-Channel
Power Dissipation	1.89 kW
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	110A
Rise Time	30 ns
Input Capacitance (Ciss)	18000pF @25V(Vds)
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1890W (Tc)
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Size-Length	20.29 mm
Size-Width	5.31 mm
Size-Height	26.59 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16

Product Description

The IXFB110N60P3 is a Polar3™ HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
Low package inductance
Low RDS (ON) and QG
Easy to mount
Space savings

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