IXFB210N30P3 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFB210N30P3
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW15819328
Category

MOSFET, MOSFET Transistor
Package

TO-264-3
Description

MOSFET Transistor, N Channel, 210A, 300V, 0.0145Ω, 10V, 5V
Documentation

Datasheet

IXFB210N30P3 Global Supplier

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IXFB210N30P3 Specifications

Attribute	Attribute Value

Part Number	IXFB210N30P3
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW15819328
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0145 Ω
Polarity	N-Channel
Power Dissipation	1.89 kW
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	300 V
Rise Time	25 ns
Input Capacitance (Ciss)	16200pF @25V(Vds)
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1890W (Tc)
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Size-Length	20.29 mm
Size-Width	5.31 mm
Size-Height	26.59 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFB210N30P3 is a N-channel enhancement mode Power MOSFET features dynamic dv/dt rating, fast intrinsic rectifier and low drain-to-tab capacitance.
Fast intrinsic rectifier
Dynamic dv/dt rating
Low drain to tab capacitance
Easy to mount
Space savings

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