IXFB44N100P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFB44N100P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW16039240
Category

MOSFET, MOSFET Transistor
Package

TO-264-3
Description

N-Channel 1000V 44A 220mΩ Through Hole PolarP2 HiPerFET Mosfet - PLUS-264
Documentation

Datasheet

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IXFB44N100P Specifications

Attribute	Attribute Value

Part Number	IXFB44N100P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW16039240
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Number of Channels	1 Channel
Power Dissipation	1250 W
Threshold Voltage	6.5 V
Drain to Source Voltage (Vds)	1000 V
Rise Time	68 ns
Input Capacitance (Ciss)	19000pF @25V(Vds)
Fall Time	56 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1250W (Tc)
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Size-Width	5.31 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Compared to traditional transistors, IXFB44N100P power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1250000 mW. This N channel MOSFET transistor operates in enhancement mode. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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