IXFB52N90P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFB52N90P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW17509062
Category

High Voltage MOS Transistor
Package

TO-264-3
Description

PLUS N-CH 900V 52A
Documentation

Datasheet

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IXFB52N90P Specifications

Attribute	Attribute Value

Part Number	IXFB52N90P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW17509062
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	160 mΩ
Polarity	N-Channel
Power Dissipation	1.25 kW
Threshold Voltage	3.5 V
Drain to Source Voltage (Vds)	900 V
Breakdown Voltage (Drain to Source)	900 V
Continuous Drain Current (Ids)	52A
Rise Time	80 ns
Input Capacitance (Ciss)	19000pF @25V(Vds)
Input Power (Max)	1250 W
Fall Time	42 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1250W (Tc)
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Size-Length	20.29 mm
Size-Width	5.31 mm
Size-Height	26.59 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

N-Channel 900V 52A (Tc) 1250W (Tc) Through Hole PLUS264™

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