IXFH12N100F - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFH12N100F
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW86650433
Category

High Voltage MOS Transistor
Package

TO-3-3
Description

IXYS SEMICONDUCTOR IXFH12N100F Power MOSFET, N Channel, 12A, 1kV, 1.05Ω, 10V, 3V
Documentation

Datasheet

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IXFH12N100F Specifications

Attribute	Attribute Value

Part Number	IXFH12N100F
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW86650433
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-3-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1.05 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	1 kV
Rise Time	9.8 ns
Input Capacitance (Ciss)	2700pF @25V(Vds)
Fall Time	12 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFH12N100F is a 1000V N-channel Enhancement Mode Power MOSFET designed for laser driver, induction heating, switch mode power supplies and switching industrial applications.
Double metal process for low gate resistance
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Low inductance offers easy to drive and protect
Fast intrinsic rectifier
Space-saving s
High power density

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