IXFH20N100P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFH20N100P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW75833225
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247 N-CH 1000V 20A
Documentation

Datasheet

IXFH20N100P Global Supplier

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IXFH20N100P Specifications

Attribute	Attribute Value

Part Number	IXFH20N100P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW75833225
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Polarity	N-CH
Power Dissipation	660 W
Threshold Voltage	6.5 V
Drain to Source Voltage (Vds)	1000 V
Continuous Drain Current (Ids)	20A
Rise Time	37 ns
Input Capacitance (Ciss)	7300pF @25V(Vds)
Fall Time	45 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	660W (Tc)
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Size-Width	5.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

In addition to amplifying electronic signals, you"ll be able to switch between various lines with the IXFH20N100P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 660000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.

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