IXFH20N80Q - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFH20N80Q
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW48161162
Category

MOSFET, MOSFET Transistor
RoHS

Lead free / RoHS Compliant
Description

TO-247AD N-CH 800V 20A
Documentation

Datasheet

IXFH20N80Q Global Supplier

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IXFH20N80Q Specifications

Attribute	Attribute Value

Part Number	IXFH20N80Q
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW48161162
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	800 V
Current Rating	20.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.42 Ω
Polarity	N-Channel
Power Dissipation	360 W
Threshold Voltage	4.5 V
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Continuous Drain Current (Ids)	20.0 A
Rise Time	27 ns
Input Capacitance (Ciss)	5100pF @25V(Vds)
Fall Time	14 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Junction Temperature (Max)	150 ℃
Power Dissipation (Max)	360W (Tc)
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.46 mm
Weight	6 g
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
HTS Code	8541290095
ECCN Code	EAR99

Product Description

The IXFH20N80Q is a Q-class HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
Low RDS (ON) and QG
Avalanche energy and current rated
UL94V-0 Flammability rating
High dV/dt and low Qg
Easy to mount
Space savings
High power density

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