IXFH24N50 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFH24N50
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW38901197
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AD N-CH 500V 24A
Documentation

Datasheet

IXFH24N50 Global Supplier

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IXFH24N50 Specifications

Attribute	Attribute Value

Part Number	IXFH24N50
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW38901197
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	500 V
Current Rating	24.0 A
Power Rating	300 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.23 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	500 V
Continuous Drain Current (Ids)	24.0 A
Rise Time	33.0 ns
Input Capacitance (Ciss)	4200pF @25V(Vds)
Input Power (Max)	300 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature (Max)	150 ℃
Power Dissipation (Max)	300W (Tc)
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Material	Silicon
Weight	6 g
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFH24N50 is a 500V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Low inductance offers easy to drive and protect
Fast intrinsic rectifier
Space-saving s
High power density

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