IXFH30N50P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFH30N50P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW43107632
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

Trans MOSFET N-CH 500V 30A 3Pin(3+Tab) TO-247AD
Documentation

Datasheet

IXFH30N50P Global Supplier

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IXFH30N50P Specifications

Attribute	Attribute Value

Part Number	IXFH30N50P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW43107632
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	500 V
Current Rating	30.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.2 Ω
Polarity	N-Channel
Power Dissipation	460 W
Threshold Voltage	5 V
Input Capacitance	4.15 nF
Gate Charge	70.0 nC
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	30.0 A
Rise Time	24 ns
Reverse recovery time	200 ns
Input Capacitance (Ciss)	4150pF @25V(Vds)
Input Power (Max)	460 W
Fall Time	24 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	460W (Tc)
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Size-Width	5.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFH30N50P is a 500V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™) and reduced RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
Unclamped Inductive Switching (UIS) rated
Low inductance offers easy to drive and protect
Easy to mount
Space-saving s
High power density

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