IXFH58N20 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFH58N20
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW35054786
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AD N-CH 200V 58A
Documentation

Datasheet

IXFH58N20 Global Supplier

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IXFH58N20 Specifications

Attribute	Attribute Value

Part Number	IXFH58N20
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW35054786
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	200 V
Current Rating	58.0 A
Power Rating	300 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.04 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	58.0 A
Rise Time	15 ns
Input Capacitance (Ciss)	4400pF @25V(Vds)
Input Power (Max)	300 W
Fall Time	16 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The IXFH58N20 is a 200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Low inductance offers easy to drive and protect
Fast intrinsic rectifier
Space-saving s
High power density

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