IXFH6N100 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFH6N100
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW11735430
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

Trans MOSFET N-CH 1kV 6A 3Pin(3+Tab) TO-247AD
Documentation

Datasheet

IXFH6N100 Global Supplier

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IXFH6N100 Specifications

Attribute	Attribute Value

Part Number	IXFH6N100
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW11735430
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	1.00 kV
Current Rating	6.00 A
Power Rating	180 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	2 Ω
Polarity	N-Channel
Power Dissipation	180 W
Threshold Voltage	4.5 V
Drain to Source Voltage (Vds)	1 kV
Continuous Drain Current (Ids)	6.00 A
Rise Time	40 ns
Input Capacitance (Ciss)	2600pF @25V(Vds)
Input Power (Max)	180 W
Fall Time	60 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	180W (Tc)
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16
HK STC License	NLR

Product Description

The IXFH6N100 is a HiPerFET™ N-channel enhancement-mode Power MOSFET features low package inductance and fast intrinsic rectifier.
International standard package
Rugged polysilicon gate cell structure
Unclamped inductive switching (UIS) rated
Low RDS (ON) HDMOS™ process
High dV/dt and low trr

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