IXFH88N30P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFH88N30P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW42950563
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

TO-247AD N-CH 300V 88A
Documentation

Datasheet

IXFH88N30P Global Supplier

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IXFH88N30P Specifications

Attribute	Attribute Value

Part Number	IXFH88N30P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW42950563
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.04 Ω
Polarity	N-Channel
Power Dissipation	600 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	300 V
Continuous Drain Current (Ids)	88.0 A
Rise Time	24 ns
Reverse recovery time	200 ns
Input Capacitance (Ciss)	6300pF @25V(Vds)
Input Power (Max)	600 W
Fall Time	25 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	600W (Tc)
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.46 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFH88N30P is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
International standard packages
Avalanche rating
Low Qg
Low package inductance
Easy to mount
Space saving

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