IXFK64N60P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFK64N60P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW46413526
Category

MOSFET, MOSFET Transistor
Package

TO-264-3
Description

IXYS SEMICONDUCTOR IXFK64N60P Power MOSFET, PolarFET, N Channel, 64A, 600V, 96mohm, 10V, 5V
Documentation

Datasheet

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IXFK64N60P Specifications

Attribute	Attribute Value

Part Number	IXFK64N60P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW46413526
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Voltage Rating (DC)	600 V
Current Rating	64.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.096 Ω
Polarity	N-Channel
Power Dissipation	1.04 kW
Threshold Voltage	5 V
Input Capacitance	1.15 nF
Gate Charge	200 nC
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	64.0 A
Rise Time	23 ns
Input Capacitance (Ciss)	12000pF @25V(Vds)
Fall Time	24 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1040W (Tc)
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

If you need to either amplify or switch between signals in your design, then Ixys Corporation"s IXFK64N60P power MOSFET is for you. Its maximum power dissipation is 1040000 mW. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.

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