IXFK98N50P3 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFK98N50P3
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW58240519
Category

MOSFET, MOSFET Transistor
Package

TO-264-3
Description

TO-264AA N-CH 500V 98A
Documentation

Datasheet

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IXFK98N50P3 Specifications

Attribute	Attribute Value

Part Number	IXFK98N50P3
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW58240519
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.05 Ω
Polarity	N-Channel
Power Dissipation	1.3 kW
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	500 V
Continuous Drain Current (Ids)	98A
Rise Time	8 ns
Input Capacitance (Ciss)	13100pF @25V(Vds)
Fall Time	6 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1300W (Tc)
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Size-Length	19.96 mm
Size-Width	5.13 mm
Size-Height	26.16 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFK98N50P3 is a Polar3™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). The Polar3™ power MOSFET family is the latest addition to IXYS benchmark high-performance polar-series power MOSFET product line. This new device is manufactured using IXYS proprietary Polar3™ technology platform, yielding new and improved device that features an optimized combination of low ON-state resistance and gate charge. The end result is a device that achieves a figure of merit (FOM) performance index (device ON-resistance multiplied by gate charge) as low as 9.6RnC. Additional device features include low thermal resistances (RthJC), dynamic dV/dt ratings, high power dissipation (Pd) and high avalanche energy capabilities. These outstanding electrical and thermal device characteristics are essential for implementing improved power efficiency and reliability in today"s demanding high-voltage conversion system.
Dynamic dV/dt rating
Avalanche rating
Low Qg
Low static drain-to-source ON-resistance
Low drain-to-tab capacitance
Low package inductance
Easy to mount
Space saving

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