IXFL100N50P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFL100N50P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW63329938
Category

MOSFET, MOSFET Transistor
Package

TO-264-3
Description

Single N-Channel 500V 625W 240NC Through Hole Power Mosfet - ISOPLUS264
Documentation

Datasheet

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IXFL100N50P Specifications

Attribute	Attribute Value

Part Number	IXFL100N50P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW63329938
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.052 Ω
Polarity	N-Channel
Power Dissipation	625 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	500 V
Continuous Drain Current (Ids)	70.0 A
Rise Time	29 ns
Isolation Voltage	2.50 kV
Input Capacitance (Ciss)	20000pF @25V(Vds)
Fall Time	26 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625W (Tc)
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFL100N50P is a PolarHV™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features silicon chip on direct-copper-bond substrate and high power density.
Avalanche rating
International standard isolated package
High power dissipation
Isolated mounting surface
Unclamped inductive switching (UIS) rating
Low package inductance - Easy to drive and to protect
Easy to mount
Space saving

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