IXFN170N10 - IXYS Semiconductor
The pictures are for reference only, and the specific specifications can be found in the product manual.
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Part NoIXFN170N10
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ManufacturerIXYS Semiconductor
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ChipWorker Part#CW34664673
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CategoryMOSFET, MOSFET Transistor
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PackageSOT-227-4
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DescriptionTrans MOSFET N-CH 100V 170A 4Pin SOT-227B
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DocumentationDatasheet
Payment Methods and Delivery
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IXFN170N10 Global Supplier
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IXFN170N10 Specifications
| Attribute | Attribute Value |
|---|---|
| Part Number | IXFN170N10 |
| Manufacturer | IXYS Semiconductor |
| ChipWorker Part# | CW34664673 |
| Category | MOSFET, MOSFET Transistor |
| Documentation | Datasheet |
| Number of Pins | 3 Pin |
| Case/Package | SOT-227-4 |
| Power Rating | 600 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.01 Ω |
| Polarity | N-Channel |
| Power Dissipation | 600 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 170 A |
| Rise Time | 90 ns |
| Input Capacitance (Ciss) | 10300pF @25V(Vds) |
| Fall Time | 79 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 600W (Tc) |
| expand all | |
| Size-Length | 38.3 mm |
| Size-Width | 25.07 mm |
| Size-Height | 9.6 mm |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
Product Description
- The IXFN170N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- Rugged polysilicon gate cell structure
- Unclamped inductive switching (UIS) rating
- Low package inductance
- Easy to mount
- Space saving
- UL94V-0 Flammability rating
Delivery
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Ordering Information
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