IXFN180N10 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFN180N10
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW39696442
Category

MOSFET, MOSFET Transistor
Package

SOT-227-4
Description

Trans MOSFET N-CH 100V 180A 4Pin SOT-227B
Documentation

Datasheet

IXFN180N10 Global Supplier

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IXFN180N10 Specifications

Attribute	Attribute Value

Part Number	IXFN180N10
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW39696442
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Chassis
Number of Pins	4 Pin
Case/Package	SOT-227-4
Number of Channels	1 Channel
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.008 Ω
Polarity	N-Channel
Power Dissipation	600 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	180 A
Rise Time	90 ns
Isolation Voltage	2.50 kV
Input Capacitance (Ciss)	9100pF @25V(Vds)
Input Power (Max)	600 W
Fall Time	65 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	600W (Tc)
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Size-Length	38.23 mm
Size-Width	25.42 mm
Size-Height	9.6 mm
Material	Silicon
Weight	42.0 g
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFN180N10 is a 100V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
miniBLOC with aluminium nitride isolation
Low drain-to-tab capacitance
Low inductance
Avalanche rated
Easy to mount
Space-saving s

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