IXFN180N20 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFN180N20
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW73966446
Category

MOSFET, MOSFET Transistor
Package

SOT-227-4
Description

SOT-227B N-CH 200V 180A
Documentation

Datasheet

IXFN180N20 Global Supplier

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IXFN180N20 Specifications

Attribute	Attribute Value

Part Number	IXFN180N20
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW73966446
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	3 Pin
Case/Package	SOT-227-4
Voltage Rating (DC)	200 V
Current Rating	180 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.01 Ω
Polarity	N-Channel
Power Dissipation	700 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	180 A
Rise Time	85 ns
Isolation Voltage	2.5 kV
Input Capacitance (Ciss)	22000pF @25V(Vds)
Input Power (Max)	700 W
Fall Time	56 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature (Max)	150 ℃
Power Dissipation (Max)	700W (Tc)
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Material	Silicon
Weight	0.046 kg
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFN180N20 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance and space saving. It is suitable for DC-to-DC converters, battery chargers and AC choppers.
International standard packages
MiniBLOC with aluminium nitride isolation
Avalanche rating
Low package inductance
Low Qg
Easy to mount

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