IXFN50N80Q2 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFN50N80Q2
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW57085190
Category

MOSFET, MOSFET Transistor
Package

SOT-227-4
Description

SOT-227B N-CH 800V 50A
Documentation

Datasheet

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IXFN50N80Q2 Specifications

Attribute	Attribute Value

Part Number	IXFN50N80Q2
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW57085190
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227-4
Power Rating	1135 W
Polarity	N-CH
Power Dissipation	1135 W
Drain to Source Voltage (Vds)	800 V
Continuous Drain Current (Ids)	50A
Rise Time	25 ns
Input Capacitance (Ciss)	13500pF @25V(Vds)
Input Power (Max)	890 W
Fall Time	13 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1135W (Tc)
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Size-Length	38.23 mm
Size-Width	25.42 mm
Size-Height	9.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Make an effective common source amplifier using this IXFN50N80Q2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 1135000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.

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