IXFN60N60 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFN60N60
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW54342731
Category

High Voltage MOS Transistor
Package

SOT-227-4
Description

Power MOSFET, N Channel, 60A, 600V, 75mohm, 10V, 4.5V
Documentation

Datasheet

IXFN60N60 Global Supplier

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IXFN60N60 Specifications

Attribute	Attribute Value

Part Number	IXFN60N60
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW54342731
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	3 Pin
Case/Package	SOT-227-4
Voltage Rating (DC)	600 V
Current Rating	60.0 A
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.075 Ω
Polarity	N-Channel
Power Dissipation	600 W
Threshold Voltage	4.5 V
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	60.0 A
Rise Time	52 ns
Isolation Voltage	2.5 kV
Input Capacitance (Ciss)	15000pF @25V(Vds)
Input Power (Max)	700 W
Fall Time	26 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature (Max)	150 ℃
Power Dissipation (Max)	700W (Tc)
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Size-Width	25.42 mm
Material	Silicon
Weight	0.04 kg
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/06/16

Product Description

The IXFN60N60 is a HiPerFET™ N-channel enhancement-mode Single Die MOSFET features avalanche rated and fast intrinsic rectifier.
International standard package
miniBLOC with aluminium nitride isolation
Low RDS (ON) HDMOS™ process
Unclamped inductive switching (UIS) rated
Rugged polysilicon gate cell structure
Low package inductance
Easy to mount
Space savings
High power density
High dV/dt and low trr

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