IXFN60N80P ,High Voltage MOS Transistor - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

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Part No

IXFN60N80P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW16123660
Category

High Voltage MOS Transistor
Package

SOT-227-4
Description

Power MOSFET, N Channel, 60A, 800V, 140mohm, 10V, 5V
Documentation

Datasheet
Ships from

Moscow
Наличие

52 pcs In Stock
Estimated Price

$ 51.22

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IXFN60N80P Specifications

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Attribute	Attribute Value

Part Number	IXFN60N80P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW16123660
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Panel
Number of Pins	4 Pin
Case/Package	SOT-227-4
Number of Channels	1 Channel
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	140 mΩ
Polarity	N-Channel
Power Dissipation	1.04 kW
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Continuous Drain Current (Ids)	60.0 A
Rise Time	29 ns
Input Capacitance (Ciss)	18000pF @25V(Vds)
Input Power (Max)	1040 W
Fall Time	26 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1040W (Tc)
	expand all
Size-Length	38.23 mm
Size-Width	25.42 mm
Size-Height	9.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

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Product Description

The IXFN60N80P is a 800V N-channel Enhancement Mode PolarHV™ Power MOSFET with fast intrinsic diode (HiPerFET™). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
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