IXFN73N30 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFN73N30
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW33537539
Category

MOSFET, MOSFET Transistor
Package

SOT-227-4
Description

SOT-227B N-CH 300V 73A
Documentation

Datasheet

IXFN73N30 Global Supplier

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IXFN73N30 Specifications

Attribute	Attribute Value

Part Number	IXFN73N30
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW33537539
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-227-4
Voltage Rating (DC)	300 V
Current Rating	73.0 A
Power Rating	520 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.045 Ω
Polarity	N-Channel
Power Dissipation	520 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	300 V
Continuous Drain Current (Ids)	73.0 A
Rise Time	80 ns
Input Capacitance (Ciss)	9000pF @25V(Vds)
Input Power (Max)	520 W
Fall Time	50 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	520W (Tc)
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Size-Width	25.42 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The IXFN73N30 is a 300V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
JEDEC TO-264 AA, epoxy meets UL94V-0 flammability
miniBLOC with aluminium nitride isolation
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Low inductance
High power density
Easy to mount
Space-saving s

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