IXFN80N50 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFN80N50
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW43475865
Category

MOSFET, MOSFET Transistor
Package

SOT-227-4
Description

SOT-227B N-CH 500V 80A
Documentation

Datasheet

IXFN80N50 Global Supplier

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IXFN80N50 Specifications

Attribute	Attribute Value

Part Number	IXFN80N50
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW43475865
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227-4
Voltage Rating (DC)	500 V
Current Rating	80.0 A
Number of Channels	1 Channel
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.055 Ω
Polarity	N-Channel
Power Dissipation	780 W
Threshold Voltage	4.5 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	80.0 A
Rise Time	70 ns
Input Capacitance (Ciss)	9890pF @25V(Vds)
Input Power (Max)	780 W
Fall Time	27 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature (Max)	150 ℃
Power Dissipation (Max)	700W (Tc)
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Size-Length	38.23 mm
Size-Width	25.42 mm
Size-Height	9.6 mm
Material	Silicon
Weight	0.000036 kg
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFN80N50 is a N-channel enhancement mode Power MOSFET features miniBLOC, with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
Fast intrinsic rectifier
High dv/dt rating
Rugged polysilicon gate cell structure
Easy to mount
Space savings
High power density

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