IXFP10N60P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFP10N60P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW62376526
Category

High Voltage MOS Transistor
Package

TO-220-3
Description

IXYS SEMICONDUCTOR IXFP10N60P Power MOSFET, N Channel, 10A, 600V, 740mohm, 10V, 5.5V
Documentation

Datasheet

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IXFP10N60P Specifications

Attribute	Attribute Value

Part Number	IXFP10N60P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW62376526
Category	High Voltage MOS Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	600 V
Current Rating	10.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.74 Ω
Polarity	N-Channel
Power Dissipation	200 W
Threshold Voltage	5.5 V
Input Capacitance	1.61 nF
Gate Charge	32.0 nC
Drain to Source Voltage (Vds)	600 V
Breakdown Voltage (Drain to Source)	600 V
Continuous Drain Current (Ids)	10.0 A
Rise Time	27 ns
Reverse recovery time	200 ns
Input Capacitance (Ciss)	1610pF @25V(Vds)
Input Power (Max)	200 W
Fall Time	21 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	10.66 mm
Size-Width	4.83 mm
Size-Height	9.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXFP10N60P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
International standard package
Unclamped inductive switching (UIS) rated
Low package inductance
Easy to mount
Space savings
High power density

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