IXFP16N50P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFP16N50P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW44661796
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 500V 16A 3Pin(3+Tab) TO-220
Documentation

Datasheet

IXFP16N50P Global Supplier

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IXFP16N50P Specifications

Attribute	Attribute Value

Part Number	IXFP16N50P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW44661796
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	500 V
Current Rating	16.0 A
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	400 mΩ
Polarity	N-Channel
Power Dissipation	300 W
Input Capacitance	2.25 nF
Gate Charge	43.0 nC
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	16.0 A
Rise Time	25 ns
Input Capacitance (Ciss)	2250pF @25V(Vds)
Input Power (Max)	300 W
Fall Time	22 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Length	10.66 mm
Size-Width	4.83 mm
Size-Height	9.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

In addition to amplifying electronic signals, you"ll be able to switch between various lines with the IXFP16N50P power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 300000 mW. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

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