IXFX180N25T - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXFX180N25T
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW94146136
Category

MOSFET, MOSFET Transistor
Package

TO-247-3
Description

N-Channel 250V 180A 12.9mΩ Through Hole GigaMOS Power Mosfet - PLUS247
Documentation

Datasheet

IXFX180N25T Global Supplier

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IXFX180N25T Specifications

Attribute	Attribute Value

Part Number	IXFX180N25T
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW94146136
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Number of Channels	1 Channel
Power Dissipation	1390 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	250 V
Rise Time	33 ns
Input Capacitance (Ciss)	28000pF @25V(Vds)
Fall Time	28 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1390W (Tc)
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Size-Width	5.21 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

GigaMOS Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Features
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Applications
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching Applications

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