IXGA20N120A3 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXGA20N120A3
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW62439830
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

Trans IGBT Chip N-CH 1200V 40A 180000mW 3Pin(2+Tab) TO-263AA
Documentation

Datasheet

IXGA20N120A3 Global Supplier

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IXGA20N120A3 Specifications

Attribute	Attribute Value

Part Number	IXGA20N120A3
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW62439830
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Power Dissipation	180 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	180 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	180000 mW
	expand all
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Design
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching
VCES= 1200V
IC110 = 20A
VCE(sat) ≤2.5V
Features
Optimized for Low Conduction Losses
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits

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Ordering Information

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