IXGA30N120B3 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXGA30N120B3
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW47768862
Category

IGBT Transistor, IGBT Module
Package

TO-263-3
Description

Trans IGBT Chip N-CH 1200V 60A 300000mW 3Pin(2+Tab) TO-263AA
Documentation

Datasheet

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IXGA30N120B3 Specifications

Attribute	Attribute Value

Part Number	IXGA30N120B3
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW47768862
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Power Dissipation	300 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	300 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300000 mW
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Size-Length	9.65 mm
Size-Width	10.41 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The IXGA30N120B3 is a GenX3™ IGBT for use with 3 to 20kHz switching applications. It is optimized for low conduction and switching losses. It features high power density and low gate drive requirement.
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