IXGH32N170A - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXGH32N170A
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW71710400
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1700V 32A 350000mW 3Pin(3+Tab) TO-247AD
Documentation

Datasheet

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IXGH32N170A Specifications

Attribute	Attribute Value

Part Number	IXGH32N170A
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW71710400
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	1.70 kV
Current Rating	75.0 A
Power Dissipation	350000 mW
Rise Time	57.0 ns
Breakdown Voltage (Collector to Emitter)	1700 V
Input Power (Max)	350 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	350000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This IXGH32N170A IGBT transistor from Ixys Corporation will work perfectly in your circuit. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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