IXGH60N60C3D1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXGH60N60C3D1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW12188433
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

IGBT 600V 75A 380W TO247AD
Documentation

Datasheet

IXGH60N60C3D1 Global Supplier

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IXGH60N60C3D1 Specifications

Attribute	Attribute Value

Part Number	IXGH60N60C3D1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW12188433
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	380 W
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	25 ns
Input Power (Max)	380 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	380 W
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.46 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.

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