IXGH6N170A - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXGH6N170A
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW13761465
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 1700V 6A 75000mW 3Pin(3+Tab) TO-247AD
Documentation

Datasheet

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IXGH6N170A Specifications

Attribute	Attribute Value

Part Number	IXGH6N170A
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW13761465
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Rating	75 W
Power Dissipation	75000 mW
Breakdown Voltage (Collector to Emitter)	1700 V
Input Power (Max)	75 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	75000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Minimize the current at your gate with the IXGH6N170A IGBT transistor from Ixys Corporation. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 1700 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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