IXGR32N170H1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXGR32N170H1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW108462400
Category

IGBT Transistor, IGBT Module
Package

TO-247
Description

IXYS SEMICONDUCTOR IXGR32N170H1 IGBT Single Transistor, Isolated, 26A, 3.5V, 200W, 1.7kV, TO-247AD, 3Pins
Documentation

Datasheet

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IXGR32N170H1 Specifications

Attribute	Attribute Value

Part Number	IXGR32N170H1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW108462400
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	200 W
Rise Time	250 ns
Breakdown Voltage (Collector to Emitter)	1700 V
Reverse recovery time	230 ns
Input Power (Max)	200 W
Fall Time	250 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

Product Description

The IXGR32N170H1 is a High Voltage IGBT with diode. It is suitable for DC choppers, capacitor discharge and pulse circuits.
Electrically isolated tab
High current handling capability
MOS gate turn-ON - drive simplicity
Rugged NPT structure
UL94V-0 Flammability rating

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