IXGT6N170A - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXGT6N170A
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW74937371
Category

IGBT Transistor, IGBT Module
Package

TO-268-3
Description

Trans IGBT Chip N-CH 1700V 6A 75000mW 3Pin(2+Tab) TO-268
Documentation

Datasheet

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IXGT6N170A Specifications

Attribute	Attribute Value

Part Number	IXGT6N170A
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW74937371
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-268-3
Power Dissipation	75000 mW
Breakdown Voltage (Collector to Emitter)	1700 V
Input Power (Max)	75 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	75000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This IXGT6N170A IGBT transistor from Ixys Corporation is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 75000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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