IXGX320N60B3 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXGX320N60B3
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW83193336
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 500A 1700000mW 3Pin(3+Tab) TO-247
Documentation

Datasheet

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IXGX320N60B3 Specifications

Attribute	Attribute Value

Part Number	IXGX320N60B3
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW83193336
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	1.7 kW
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	1700 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1700000 mW
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Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.46 mm
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Minimize the current at your gate with the IXGX320N60B3 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 1700000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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