IXTA36P15P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTA36P15P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW75833110
Category

MOSFET, MOSFET Transistor
Package

TO-263-3
Description

D2PAK P-CH 150V 36A
Documentation

Datasheet

IXTA36P15P Global Supplier

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IXTA36P15P Specifications

Attribute	Attribute Value

Part Number	IXTA36P15P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW75833110
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Polarity	P-CH
Power Dissipation	300 W
Drain to Source Voltage (Vds)	150 V
Continuous Drain Current (Ids)	36A
Rise Time	31 ns
Input Capacitance (Ciss)	3100pF @25V(Vds)
Fall Time	15 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Make an effective common gate amplifier using this IXTA36P15P power MOSFET from Ixys Corporation. Its maximum power dissipation is 300000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

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