IXTK120N25P - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTK120N25P
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW13088085
Category

MOSFET, MOSFET Transistor
Package

TO-264-3
Description

Trans MOSFET N-CH 250V 120A 3Pin(3+Tab) TO-264AA
Documentation

Datasheet

IXTK120N25P Global Supplier

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IXTK120N25P Specifications

Attribute	Attribute Value

Part Number	IXTK120N25P
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW13088085
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.024 Ω
Polarity	N-Channel
Power Dissipation	700 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	250 V
Continuous Drain Current (Ids)	120 A
Rise Time	33 ns
Input Capacitance (Ciss)	8000pF @25V(Vds)
Input Power (Max)	700 W
Fall Time	33 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	700W (Tc)
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

The IXTK120N25P is a Polar™ single N-channel enhancement-mode Power MOSFET with fast intrinsic diode. It features reduced static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, laser drivers, switched-mode and resonant-mode power supplies.
International standard packages
Avalanche rating
Low package inductance
Easy to mount
Space saving

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