IXTP60N10T - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTP60N10T
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW66576726
Category

MOSFET, MOSFET Transistor
Package

TO-220-3
Description

Trans MOSFET N-CH 100V 60A 3Pin(3+Tab) TO-220AB
Documentation

Datasheet

IXTP60N10T Global Supplier

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IXTP60N10T Specifications

Attribute	Attribute Value

Part Number	IXTP60N10T
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW66576726
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Drain to Source Resistance (on) (Rds)	18.0 mΩ
Polarity	N-Channel
Power Dissipation	176 W
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	60.0 A
Rise Time	40 ns
Input Capacitance (Ciss)	2650pF @25V(Vds)
Input Power (Max)	176 W
Fall Time	37 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	176W (Tc)
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Size-Length	10.66 mm
Size-Width	4.82 mm
Size-Height	9.15 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Amplify electronic signals and switch between them with the help of Ixys Corporation"s IXTP60N10T power MOSFET. Its maximum power dissipation is 176000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

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