IXTT40N50L2 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTT40N50L2
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW61504323
Category

MOSFET, MOSFET Transistor
Package

TO-268-3
Description

TO-268 N-CH 500V 40A
Documentation

Datasheet

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IXTT40N50L2 Specifications

Attribute	Attribute Value

Part Number	IXTT40N50L2
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW61504323
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-268-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	170 mΩ
Polarity	N-Channel
Power Dissipation	540 W
Threshold Voltage	2.5 V
Drain to Source Voltage (Vds)	500 V
Breakdown Voltage (Drain to Source)	500 V
Continuous Drain Current (Ids)	40A
Rise Time	133 ns
Input Capacitance (Ciss)	10400 pF
Input Power (Max)	540 W
Fall Time	44 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	540W (Tc)
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Size-Length	14 mm
Size-Width	16.05 mm
Size-Height	5.1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

Product Description

This IXTT40N50L2 power MOSFET from Ixys Corporation can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 540000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes linear l2 technology.

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