IXTT6N120 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTT6N120
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW128074464
Category

MOSFET, MOSFET Transistor
Package

TO-268-3
Description

TO-268 N-CH 1200V 6A
Documentation

Datasheet

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IXTT6N120 Specifications

Attribute	Attribute Value

Part Number	IXTT6N120
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW128074464
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-268-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	2.6 Ω
Polarity	N-CH
Power Dissipation	300 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	1200 V
Breakdown Voltage (Drain to Source)	1200 V
Continuous Drain Current (Ids)	6A
Rise Time	33 ns
Input Capacitance (Ciss)	1950pF @25V(Vds)
Input Power (Max)	300 W
Fall Time	18 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Length	14 mm
Size-Width	16.05 mm
Size-Height	5.1 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

N-Channel 1200V 6A (Tc) 300W (Tc) Surface Mount TO-268AA

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