IXTY44N10T - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXTY44N10T
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW96160069
Category

MOSFET, MOSFET Transistor
Package

TO-252-3
Description

TO-252AA N-CH 100V 44A
Documentation

Datasheet

IXTY44N10T Global Supplier

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IXTY44N10T Specifications

Attribute	Attribute Value

Part Number	IXTY44N10T
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW96160069
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	22 mΩ
Polarity	N-CH
Power Dissipation	130 W
Threshold Voltage	4.5 V
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	85 V
Continuous Drain Current (Ids)	44A
Rise Time	47 ns
Input Capacitance (Ciss)	1262pF @25V(Vds)
Fall Time	32 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	130W (Tc)
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Size-Length	6.22 mm
Size-Width	6.73 mm
Size-Height	2.38 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Create an effective common drain amplifier using this IXTY44N10T power MOSFET from Ixys Corporation. Its maximum power dissipation is 130000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes TrenchFET technology.

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