IXXH100N60B3 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXXH100N60B3
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW62949336
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 220A 830000mW 3Pin(3+Tab) TO-247AD
Documentation

Datasheet

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IXXH100N60B3 Specifications

Attribute	Attribute Value

Part Number	IXXH100N60B3
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW62949336
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	830 W
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	830 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	830000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This fast-switching IXXH100N60B3 IGBT transistor from Ixys Corporation will be perfect in your circuit. Its maximum power dissipation is 830000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

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