IXXH50N60C3D1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXXH50N60C3D1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW42560986
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 600V 100A 600000mW Automotive 3Pin(3+Tab) TO-247AD
Documentation

Datasheet

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IXXH50N60C3D1 Specifications

Attribute	Attribute Value

Part Number	IXXH50N60C3D1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW42560986
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	600000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	25 ns
Input Power (Max)	600 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	600000 mW
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Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

Minimize the current at your gate with the IXXH50N60C3D1 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 600000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

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