IXYH40N90C3D1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXYH40N90C3D1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW87940703
Category

IGBT Transistor, IGBT Module
Package

TO-247-3
Description

Trans IGBT Chip N-CH 900V 90A 500000mW 3Pin(3+Tab) TO-247AD
Documentation

Datasheet

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IXYH40N90C3D1 Specifications

Attribute	Attribute Value

Part Number	IXYH40N90C3D1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW87940703
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Power Dissipation	500000 mW
Breakdown Voltage (Collector to Emitter)	900 V
Reverse recovery time	100 ns
Input Power (Max)	500 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

This IXYH40N90C3D1 IGBT transistor from Ixys Corporation will work perfectly in your circuit. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 500000 mW. It is made in a single configuration. This device is made with xpt technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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