IXYN100N120C3H1 - IXYS Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

IXYN100N120C3H1
Manufacturer

IXYS Semiconductor
ChipWorker Part#

CW31656703
Category

IGBT Transistor, IGBT Module
Package

SOT-227-4
Description

Trans IGBT Chip N-CH 1200V 134A 690000mW 4Pin SOT-227B
Documentation

Datasheet

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IXYN100N120C3H1 Specifications

Attribute	Attribute Value

Part Number	IXYN100N120C3H1
Manufacturer	IXYS Semiconductor
ChipWorker Part#	CW31656703
Category	IGBT Transistor, IGBT Module
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-227-4
Number of Positions	4 Position
Polarity	N-Channel
Power Dissipation	690 W
Breakdown Voltage (Collector to Emitter)	1200 V
Input Capacitance (Cies)	6nF @25V
Input Power (Max)	690 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	690 W
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Size-Length	38.23 mm
Size-Width	25.42 mm
Size-Height	9.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

Don"t be afraid to step up the amps in your device when using this IXYN100N120C3H1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 690000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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